Illumination device

ABSTRACT

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

CROSS REFERENCE TO RELATED APPLICATIONS

This present application is a continuation application of U.S. patentapplication Ser. No. 16/404,187, filed on May 6, 2019, which is acontinuation application of U.S. patent application Ser. No. 16/016,401,filed on Jun. 22, 2018, which is a continuation application of U.S.patent application Ser. No. 15/631,482, filed on Jun. 23, 2017, which isa Continuation Application of U.S. application Ser. No. 14/340,574,filed on Jul. 25, 2014, which is a Continuation in Part application ofU.S. application Ser. No. 13/904,038, filed on May 29, 2013, and U.S.application Ser. No. 14/340,574 claims the benefit of U.S. provisionalapplication No. 61/893,908, filed on Oct. 22, 2013, and the entirecontents of these related applications are incorporated herein byreference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a semiconductor light emitting elementand an illumination device thereof, and more particularly, to asemiconductor light emitting element providing light inmulti-directions, and an illumination device including the semiconductorlight emitting element.

2. Description of the Prior Art

A light beam emitted from a light emitting diode (LED) is a kind ofdirectional light source, which is different from a dispersive lightsource of a conventional bulb. Accordingly, applications of LED arelimited. For instance, the conventional LED cannot or may be hard toprovide required lighting effect for indoor and outdoor illuminationapplications. Additionally, conventional LED illumination devices emitlight beams from a single side and luminous efficiency of theconventional LED illumination device is relatively low accordingly.

SUMMARY OF THE INVENTION

The present invention provides an illumination device.

The illumination device includes a supporting base, and a light-emittingelement inserted in the supporting base. The light-emitting elementincludes a substrate having a supporting surface and a side surface, alight-emitting chip disposed on the supporting surface, and a firstwavelength conversion layer covering the light-emitting chip and only aportion of the supporting surface without covering the side surface.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 and FIG. 2 are schematic structure diagrams illustrating asemiconductor light emitting element according to a preferred embodimentof the present invention.

FIGS. 3-5 are schematic diagrams illustrating different types ofelectrically coupling approaches between a light emitting diodestructure and conductors according to a preferred embodiment of thepresent invention.

FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of awavelength conversion layer according to a preferred embodiment of thepresent invention.

FIG. 8 is a cross-sectional diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 9 is a cross-sectional diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 10 is a schematic diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 11 is a schematic diagram illustrating a supporting base accordingto a preferred embodiment of the present invention.

FIG. 12 is a schematic diagram illustrating a circuit board according toa preferred embodiment of the present invention.

FIG. 13 is a schematic diagram illustrating a reflector according to apreferred embodiment of the present invention.

FIG. 14 is a schematic diagram illustrating a diamond-like carbon filmaccording to a preferred embodiment of the present invention.

FIG. 15 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 16 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 17 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIGS. 18-20 are schematic diagrams illustrating a transparent substrateinserted or bonded to a supporting base according to a preferredembodiment of the present invention.

FIG. 21 and FIG. 22 are schematic diagrams illustrating a transparentsubstrate bonded to a supporting base with supports according to apreferred embodiment of the present invention.

FIG. 23 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 24 is a schematic diagram illustrating a device frame of anillumination device according to another preferred embodiment of thepresent invention.

FIG. 25 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIGS. 26-29 are schematic diagrams illustrating transparent substratespoint-symmetrically or line-symmetrically disposed on a supportingstructure according to a preferred embodiment of the present invention.

FIG. 30 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 31 and FIG. 32 are schematic diagrams illustrating a lamp housingaccording to a preferred embodiment of the present invention.

FIG. 33 is a schematic diagram illustrating a semiconductor lightemitting element according to a preferred embodiment of the presentinvention.

FIG. 34 is a schematic diagram illustrating an illumination deviceaccording to a preferred embodiment of the present invention.

FIG. 35 is a schematic diagram illustrating an assembly of supportsaccording to the preferred embodiment of the present invention.

FIG. 36 is a schematic diagram illustrating an illumination device witha lamp housing according to the preferred embodiment of the presentinvention.

FIG. 37 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 38 is a schematic diagram illustrating an assembly of a support anda pillar according to the preferred embodiment of the present invention.

DETAILED DESCRIPTIONS

Please refer to FIG. 1 and FIG. 2. FIG. 1 and FIG. 2 are schematicstructure diagrams illustrating a semiconductor light emitting elementaccording to a preferred embodiment of the present invention. As shownin FIG. 1 and FIG. 2, a semiconductor light emitting element 1 includesa transparent substrate 2, a support surface 210, a first main surface21A, a second main surface 21B and at least one light emitting diode(LED) structure 3 providing light in multi-directions. The transparentsubstrate 2, which is a sheet type substrate, has two main surfaces, andone of the surfaces is the support surface 210. The LED structure 3capable of emitting light is disposed on the support surface 210. Alight emitting surface 34 of the LED structure 3 uncovered by thetransparent substrate 2 and at least a part of the support surface 210without the LED structure form the first main surface 21A where lightemitted from. The second main surface 21B is another main surface of thetransparent substrate 2 without the LED structures 3. The dispositiondescribed above may also be reversed, or the LED structure 3 may bedisposed on the two surfaces of the transparent substrate 2. In oneembodiment, LED structures 3 may be disposed on the support surface 210of the transparent substrate 2 interlacedly corresponding to other LEDstructures 3 disposed on the second main surface 21B, such that lightbeams emitted from LED structures 3 on one surface of the transparentsubstrate 2 would not be blocked by other LED structures 3 on anothersurface of the transparent substrate 2. The luminance of thesemiconductor light emitting element 1 may be increased accordingly. Amaterial of the transparent substrate 2 may comprise one selected fromaluminum oxide (Al2O3), sapphire containing aluminum oxide, siliconcarbide (SiC), glass, plastic or rubber. Preferably, the transparentsubstrate may be a sapphire substrate in a preferred embodiment of thepresent invention. The structure of the sapphire substrate issubstantially single crystal. The sapphire substrate has properties ofhigher light transmittance and better heat dissipation capability. Thesapphire substrate may be used to increase the life time of thesemiconductor light emitting element 1. However, the conventionalsapphire substrate used for growing a conventional light emitting diodemay be fragile when applied in the present invention. According toexperiment results of the present invention, the transparent substrate 2of the present invention is preferably a sapphire substrate having athickness thicker than or equal to 200 micrometers so as to performbetter reliability, supporting performance and transparency. Foreffectively emitting light in multi-directions, includingdual-directions or full directions, from the semiconductor lightemitting element 1, the LED structure 3 in this invention preferably hasa beam angle greater than 180 degrees. Accordingly, the LED structure 3disposed on the transparent substrate 2 may emit light beams from thelight emitting surface 34 toward a direction away from the transparentsubstrate 2, and the LED structure 3 may also emit light beams at leastpartially entering the transparent substrate 2. The light beams enteringthe transparent substrate 2 may emerge from the second main surface 21Bopposite to the first main surface 21A, and the light beams entering thetransparent substrate 2 may also be emitted from a part of the supportsurface 210 without LED structures 3 or emitted from other surface ofthe transparent substrate 2. The semiconductor light emitting element 1may then be capable of emitting light in multi-directions includingdual-directions or full directions. In this invention, an area of thefirst main surface 21A or an area of the second main surface 21B islarger than 5 times of a total area formed from at least one of thelight emitting surfaces 34 of each LED structure, and this is apreferred proportion according to the consideration of both the luminousefficiency and the heat dissipation performance.

Additionally, in another preferred embodiment of the present invention,a difference in color temperatures of light beams emitted from the firstmain surface 21A and the second main surface 21B is smaller than orequal to 1500K so as to uniform light emitting effects of thesemiconductor light emitting element 1. In addition, under the thicknesscondition of the transparent substrate 2 mentioned above, a lighttransmittance of the transparent substrate 3 is larger than or equal to70% for light beams having a wavelength range larger than or equal to420 nanometers, or light beams having a wavelength rage smaller than orequal to 470 nanometers.

The present invention is not limited to the embodiment described above.The following description will detail the different embodiments in thepresent invention. To simplify the description, similar components ineach of the following embodiments are marked with identical symbols. Formaking it easier to understand the differences between the embodiments,the following description will detail the dissimilarities amongdifferent embodiments and the identical features will not be redundantlydescribed.

Please refer to FIGS. 3-5. In the present invention, the LED structure 3includes a first electrode 31A and a second electrode 31B for receivingelectricity. The first electrode 31A and the second electrode 31B arerespectively and electrically connected to a first connecting conductor23A and a second connecting conductor 23B on the transparent substrate2. FIGS. 3-5 are schematic diagrams illustrating different types ofelectrically coupling approaches between the light emitting diodestructure 3 and the conductors. FIG. 3 illustrates a horizontal type LEDstructure, the LED structure 3 is formed on the support surface 210 ofthe transparent substrate 2, and the electrodes 31A and 31B are coupledto the connecting conductors 23A and 23B by wire bonding. FIG. 4illustrates a flip chip type LED structure 3, and the LED structure 3 isdisposed reversely and electrically coupled to the transparent substrate2 by the first electrode 31A and the second electrode 31B. The firstelectrode 31A and the second electrode 31B may be directly coupled tothe first connecting conductor 23A and the second connecting conductor23B by welding or adhering. As shown in FIG. 5, the first electrode 31Aand the second electrode 31B are disposed on different surfaces of theLED structure 3, and the LED structure 3 is vertically disposed so as torespectively connect the electrodes 31A and 31B to the connectingconductors 23A and 23B.

Please refer to FIG. 6 and FIG. 7. The semiconductor light emittingelement 1 in the present invention may further include a wavelengthconversion layer 4. The wavelength conversion layer 4 may be selectivelydisposed on the first main surface 21A or/and the second main surface21B, or directly on the LED structures 3. The wavelength conversionlayer 4 may directly contact the LED structures 3, or the wavelengthconversion layer 4 may be separated from the LED structures 3 by adistance without directly contact. The wavelength conversion layer 4contains at least one kind of fluorescent powders such as organicfluorescent powder or inorganic fluorescent powder of garnet series,sulfate series or silicate series. The wavelength conversion layer 4 maythen be able to at least partially absorb a light beam emitted from theLED structure 3 and covert the light beam into another light beamshaving different wavelength range. For example, when blue light beamsare emitted from the LED structure 3, a part of the blue light beams maybe converted into yellow light beams by the wavelength conversion layer4, and the blue light beams and the yellow light beams may be mixed forpresenting white light beams emitted from the semiconductor lightemitting element 1. Additionally, a luminance of the first main surface21A is different from a luminance of the second main surface 21B becausea light source of the first main surface 21A mainly comes from lightbeams directly emitted from the LED structure 3, and a light source ofthe second main surface 21B comes from light beams passing through thetransparent substrate 2. Therefore, in a semiconductor light emittingelement 1 of another preferred embodiment, concentrations of thefluorescent powders in the wavelength conversion layer 4 disposed on thefirst main surface 21A and the wavelength conversion layer 4 disposed onthe second main surface 21B are arranged correspondingly. Preferably, aratio of a fluorescent powder concentration in the wavelength conversionlayer 4 disposed on the first main surface 21A to a fluorescent powderconcentration in the wavelength conversion layer 4 disposed on thesecond main surface 21B may ranges from 1:0.5 to 1:3, or a ratio of thefluorescent powder concentration in the wavelength conversion layer 4disposed on the second main surface 21B to the fluorescent powders inthe wavelength conversion layer 4 disposed on the first main surface 21Amay ranges from 1:0.5 to 1:3. The luminance and the lighting effect ofthe semiconductor light emitting element 1 may become more appropriatefor different applications accordingly. A difference in colortemperatures of light beams emitted from the first main surface 21A andthe second main surface 21B may then be controlled to be smaller than orequal to 1500K. A wavelength converting efficiency and light emittingperformance of the semiconductor light emitting element 1 may then beenhanced.

Please refer to FIG. 8. FIG. 8 is a cross-sectional diagram illustratinga semiconductor light emitting element 1 according to another preferredembodiment of the present invention. As shown in FIG. 8, thesemiconductor light emitting element 1 in this embodiment includes atransparent substrate 2 and at least one LED structure 14 providinglight in multi-directions. The transparent substrate 2 has a supportsurface 210 and a second main surface 21B disposed opposite to eachother. The LED structure 14 is disposed on the support surface 210 ofthe transparent substrate 2. The LED structure 14 includes a firstelectrode 16 and a second electrode 18. The first electrode 16 and thesecond electrode 18 are configured to be electrically connected to otherdevices. A light emitting surface 34 of the LED structure 14 uncoveredby the transparent substrate 2 and at least a part of the supportsurface 210 without the LED structure 14 form a first main surface 21Awhere light emitted from.

The LED structure 14 may include a substrate 141, an N-typedsemiconductor layer 142, an active layer 143 and a P-typed semiconductorlayer 144. In this embodiment, the substrate 141 of the LED structure 14may be attached on the transparent substrate 2 by such as a chip bondinglayer 28. Apart from being used to attach the LED structure 14, a lightintensity may also be increased by optimizing the material property ofthe chip bonding layer 28. For example, a refractive index of the chipbonding layer 28 is preferably between a refractive index of thesubstrate 141 and a refractive index of the transparent substrate 2 soas to increase the intensity of light emitted from the LED structure 14.In addition, the chip bonding layer 28 may be a transparent adhesive orother appropriate bonding material. The first electrode 16 and thesecond electrode 18 are disposed on the side of the LED structure 14opposite to the chip bonding layer 28. The first electrode 16 and thesecond electrode 18 are electrically connected to the P-typedsemiconductor layer 144 and the N-typed semiconductor layer 142respectively (FIG. 8 does not show the connecting relation between thesecond electrode 18 and the N-typed semiconductor layer 142). Horizontallevel of an upper surface of the first electrode 16 and an upper surfaceof the second electrode 18 are substantially the same. The firstelectrode 16 and the second electrode 18 may be metal electrodes, butnot limited thereto. In addition, the semiconductor light emittingelement 1 further includes a first connecting conductor 20, a secondconnecting conductor 22 and a wavelength conversion layer 4. The firstconnecting conductor 20 and the second connecting conductor 22 aredisposed on the transparent substrate 2. The first connecting conductor20 and the second connecting conductor 22 may be metal wires or otherconductive patterns, but not limited thereto. The first electrode 16 andthe second electrode 18 are respectively connected to the firstconnecting conductor 20 and the second connecting conductor 22electrically by wire bonding or welding, but not limited thereto. Thewavelength conversion layer 4 is disposed on the transparent substrate2, and the wavelength conversion layer 4 may cover the LED structure 14.Additionally, the wavelength conversion layer 4 may further cover thesecond main surface 21B of the transparent substrate 2.

In addition, a non-planar structure 12M may be selectively disposed onthe surfaces of the transparent substrate 2 for increasing the intensityof light emitted from the transparent substrate 2 and unifying thedistribution of the emitted light. The non-planar structure 12M may be aconvex geometric structure or a concave geometric structure, such as apyramid, a cone, a hemispheroid, a triangular prism and so forth. Thenon-planar structures 12M may be arranged regularly or randomly.Furthermore, a diamond-like carbon (DLC) film 25 may be selectivelydisposed on the surfaces of the transparent substrate 2 so as to enhancethe thermal conductive ability and the heat dissipating performance.

Please refer to FIG. 9. FIG. 9 is a cross-sectional diagram illustratinga semiconductor light emitting element according to another preferredembodiment of the present invention. Compared with the embodiment shownin FIG. 8, in the semiconductor light emitting element 1 of thisembodiment, the first electrode 16, the second electrode 18 and a firstchip bonding layer 28A are disposed on the same surface of the LEDstructure 14. That the first electrode 16 and the second electrode 18are electrically connected to the first connecting conductor 20 and thesecond connecting conductor 22 by flip chip. Wherein the firstconnecting conductor 20 and the second connecting conductor 22 mayrespectively extend corresponding to the positions of the firstelectrode 16 and 18. And the first electrode 16 and the second electrode18 may be respectively connected to the first connecting conductor 20and the second connecting conductor 22 electrically through a secondchip bonding layer 28B. The second chip bonding layer 28B may be aconductive bump such as a gold bump or a solder bump, a conductive gluesuch as a silver glue, or an eutectic layer such as an Au—Sn alloyeutectic layer or an In—Bi—Sn alloy eutectic layer, but not limited tothis. By employing the second chip bonding layer 28B, the first chipbonding layer 28A under the LED structure 14 may not be required or maybe replaced by the wavelength conversion layer 4.

Please refer to FIG. 10. FIG. 10 is a schematic diagram illustrating asemiconductor light emitting element according to another preferredembodiment of the present invention. As shown in FIG. 10, asemiconductor light emitting element 310 in this invention includes thetransparent substrate 2, at least one LED structure 3, a firstconnecting electrode 311A, a second connecting electrode 311B and atleast one wavelength conversion layer 4. The LED structure 3 is disposedon the support surface 210 of the transparent substrate 2 and forms afirst main surface 21A where light emitted from. In this embodiment, theLED structure 3 has a beam angle greater than 180 degrees, and at leasta part of light beams emitted from the LED structure 3 penetrate intothe transparent substrate 2. At least a part of the penetrating lightbeams may be emitted from a second main surface 21B which is opposite tothe first main surface 21A, and the other penetrating light beams may beemitted from other surfaces of the transparent substrate 2, so as toform the semiconductor light emitting element 310 providing light inmulti-directions. The first connecting electrode 311A and the secondconnecting electrode 311B are respectively disposed on different sidesof the transparent substrate 2 or on the same side of the transparentsubstrate 2 (not shown in FIG. 10). The first connecting electrode 311Aand the second connecting electrode 311B may be electrodes of thesemiconductor light emitting element 310 respectively formed byextension parts of a first connecting conductor and a second connectingconductor on the transparent substrate 2, and the first connectingelectrode 311A and the second connecting electrode 311B are electricallyconnected to the LED structure 3 accordingly. The wavelength conversionlayer 4 at least covers the LED structure 3 and exposes at least a partof the first connecting electrode 311A and the second connectingelectrode 311B. The wavelength conversion layer 4 at least partiallyabsorbs a light beam emitted from the LED structure 3 or/and thetransparent substrate 2, and coverts the light beam into a light beamhaving another wavelength range. The converted light and the light whichare not absorbed by the wavelength conversion layer 4 are mixed toextend the total wavelength range of the light beams emitted from thesemiconductor light emitting element 310 and improve the light emittingperformance of the semiconductor light emitting element 310. Because thesemiconductor light emitting element 310 in this embodiment includes thefirst connecting electrode 311A and the second connecting electrode 311Brespectively disposed on the transparent substrate 2, traditional LEDpackaging process may be omitted and the semiconductor light emittingelement 310 may be independently manufactured and then combined with anappropriate supporting base. Accordingly, the total manufacturing yieldmay be improved, the structure may be simplified and applications of thecorresponding supporting base may also be increased.

Please refer to FIG. 11. An illumination device 11 is provided in thisembodiment. The illumination device 11 includes a supporting base 5 andthe semiconductor light emitting element described above. Thetransparent substrate 2 of the semiconductor light emitting element maystand on (or lie on) and be electrically coupled to the supporting base5. A first angle θ1 exists between the transparent substrate 2 and thesupporting base 5. The first angle θ1 may be fixed or be adjustedaccording to the light shape requirement of the illumination device.Preferably, the first angle θ1 ranges from 30 degrees to 150 degrees.

Please refer to FIG. 12. The supporting base 5 of the illuminationdevice 11 in the present invention may further include a circuit board 6electrically coupled to a power supply. The circuit board 6 iselectrically coupled to a first connecting conductor and a secondconnecting conductor (not shown in FIG. 12) so as to be electricallyconnected to the LED structure 3. The power supply may then provideelectricity to the LED ship 3 for emitting light via the circuit board6. In other preferred embodiment of the present invention, the LEDstructure 3 may also be electrically connected to the supporting basedirectly via the first connecting conductor and the second connectingconductor (not shown in FIG. 12) without the circuit board 6, and thepower supply may provide electricity to the LED ship 3 via thesupporting base 5.

Please refer to FIG. 13. The illumination device 11 of the presentinvention may further include a reflector or filter 8 disposed on thesecond main surface 21B or the support surface 210. The reflector orfilter 8 may be used to reflect at least a part of light beams emittedfrom the LED structure 3 and passing through the transparent substrate2. At least a part of the reflected light beams may be changed to beemitted from the first main surface 21A. The reflector 8 may include atleast one metal layer or a Bragg reflector, but not limited thereto. TheBragg reflector may be composed of a plurality of insulating thin filmswith different refractive indexes disposed in a stack configuration, orthe Bragg reflector may be composed of a plurality of insulating thinfilms with different refractive indexes and a plurality of metal oxidelayers disposed in a stack configuration.

Please refer to FIG. 14. The illumination device 11 of the presentinvention may further include a diamond-like carbon (DLC) film 9disposed on the support surface 210 or/and the second main surface 21Bof the transparent substrate 2 so as to enhance the thermal conductiveability and the heat dissipating performance.

Please refer to FIG. 15. FIG. 15 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. As shown in FIG. 15, an illumination device 10 inthis embodiment includes a supporting base 26 and the semiconductorlight emitting element described in the present invention. Thesemiconductor light emitting element includes a transparent substrate 2and at least one LED structure 14. The semiconductor light emittingelement may be at least partially embedded into the supporting base 26.An electrode 30 and an electrode 32 of the supporting base 26 areelectrically connected to the connecting conductors of the semiconductorlight emitting element. Driving voltage V+ and V− may be accordinglyprovided through the electrodes 30 and 32 respectively to the LEDstructure 14 for emitting the light beam L. The LED structure 14includes a first electrode 16 and a second electrode 18 respectively andelectrically connected to the first connecting conductor 20 and thesecond connecting conductor 22 by wire bonding, but not limited thereto.Additionally, the LED structure 14 has a beam angle greater than 180degrees or has a plurality of light emitting surfaces, and then theillumination device 10 may emit light beams from the first main surface21A and the second main surface 21B. Furthermore, because some of thelight beams may be emitted directly from the LED structure 14 and/or theother four side surfaces of the transparent substrate 2, theillumination device 10 may accordingly emit light from multi sides orsix sides or in full directions.

The semiconductor light emitting element may further include awavelength conversion layer 4 selectively disposed on the LED structure14, the first main surface 21A or the second main surface 21B. Thewavelength conversion layer 4 may at least partially absorb a light beamemitted from the LED structure 14 and covert the light beam into anotherlight beam having different wavelength range so as to emit light withspecific color or light having a wider wavelength range from theillumination device 10. For example, when blue light beams are emittedfrom the LED structure 14, a part of the blue light beams may beconverted into yellow light beams by the wavelength conversion layer 4,and the blue light beams and the yellow light beams may be mixed forpresenting white light beams emitted from the illumination device 10.Additionally, the transparent substrate 2 may be directly or indirectlyfixed on the supporting base 26 in a parallel state or a non-parallelstate. For instance, the transparent substrate 2 may be vertically fixedon the supporting base 26 by mounting a side wall of the transparentsubstrate 2 with the supporting base 26 directly, or the transparentsubstrate 2 may be horizontally disposed on the supporting base 26, butnot limited thereto. The transparent substrate 2 preferably includesmaterials with high thermal conductivity, and heat generated from theLED structure 14 may be accordingly dissipated to the supporting base 26through the transparent substrate 2, such that the high power LEDstructures can be applied in the illumination device of the presentinvention accordingly. However, in a preferred embodiment of the presentinvention, at the same power consumption of the illumination device,more LED structures with relatively low power are dispersed on thetransparent substrate 2 so as to fully utilize the thermal conductivitycapability of the transparent substrate 2. For example, a power of theLED structure in this embodiment may be equal to or lower than 0.2 watt,but not limited thereto.

Please refer to FIG. 16. FIG. 16 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. Compared with the illumination shown in FIG. 15, anillumination device 10′ in this embodiment includes a plurality of LEDstructures 14, and at least some of the LED structures 14 areelectrically connected to each other in series. Each of the LEDstructures 14 includes the first electrode 16 and the second electrode18. The first electrode 16 of one LED structure 14 disposed on one endof the series is electrically connected to the first connectingconductor 20, and the second electrode 18 of another LED structure 14disposed on another end of the series is electrically connected to thesecond connecting conductor 22, but not limited thereto. The LEDstructures 14 may be electrically connected in series or in parallel.The LED structures 14 may be LED structures emitting identical color,such as blue LED structures, or LED structures emitting different colorsmay also be applied and combined according to different demands. Theillumination device 10′ may emit light in much more different colors byfurther employing the wavelength conversion layer 4 according to thepresent invention.

Please refer to FIG. 17. FIG. 17 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. Compared with the illumination devices shown in FIG.15 and FIG. 16, an illumination device 50 in this embodiment furtherincludes a support 51 configured to connect the semiconductor lightemitting element and the supporting base 26. The transparent substrate 2of the semiconductor light emitting element is fixed on a side of thesupport 51 by a unit bonding layer 52, and another side of the support51 may be disposed on or inserted into the supporting base 26.Additionally, the support 51 is flexible so as to form an angle betweenthe transparent substrate 2 and the supporting base 26, and the angleranges from 30 degrees to 150 degrees. A material of the support 51 mayinclude one selected from aluminum, composite metallic material, copperconductor, electric wire, ceramic substrate, printed circuit board, orother appropriate materials.

Please refer to FIGS. 18-20. When the transparent substrate 2 in thepresent invention is disposed on a supporting base 5, the transparentsubstrate 2 may be inserted or bonded to the supporting base 5.

As shown in FIG. 18. When the transparent substrate 2 is disposed on thesupporting base 5, the transparent substrate 2 is inserted in to asingle socket 61 of the supporting base 5, and the semiconductor lightemitting element may be electrically coupled to the single socket 61 viaconnecting conductors. The LED structures (not shown in FIG. 18) on thetransparent substrate 2 have to be electrically coupled to a powersupply from or through the supporting base 5, and at least part of theconductive pattern or the connecting conductors are extended to an edgeof the transparent substrate 2 and integrated in to an connecting fingerhaving a plurality of conductive contact sheets or an electricallyconnecting port such as the connecting electrodes 311A and 311Bdescribed above (not shown in FIG. 18). When the transparent substrate 2is inserted into the socket 61, the LED structure (not shown in FIG. 18)may then receive electricity from or through the supporting base 5, andthe transparent substrate 2 may be fixed by the socket 61 of thesupporting base 5 accordingly.

Please refer to FIG. 19. FIG. 19 is a schematic diagram illustrating thetransparent substrate 2 inserted into a multi sockets of the supportingbase 5. In this embodiment, the transparent substrate 2 has a dual-pinstructure. One of the pins may be configured as a positive electrode ofthe device, and another one of the pins may be configured as a negativeelectrode of the device. Both of the pins have at least one conductivecontact sheet respectively so as to act as connecting ports.Accordingly, there are at least two sockets 61 having correspondingshape and size with the pins so as to smoothly insert the transparentsubstrate 2 into the supporting base 5 and provide electricity to theLED structure.

Please refer to FIG. 20. The transparent substrate 2 is bonded to thesupporting base 5 by the device bonding layer. In the bonding process,metal materials such as gold, tin, indium, bismuth or silver may be usedin combining or welding the transparent substrate 2 and the supportingbase 5. Additionally, conductive silica gel or epoxy material may alsobe used in fixing the transparent substrate 2 on the supporting base 5.The conductive pattern and the connecting conductors of thesemiconductor light emitting element may be electrically connected tothe supporting base via the device bonding layer accordingly.

Please refer to FIG. 21 and FIG. 22. The supporting base 5 of theillumination device 11 described in the present invention may be asubstrate comprising one selected from metal such as aluminum, compositemetallic material including aluminum, copper conductor, electric wire,ceramic substrate or printed circuit board. There is at least onesupport 62 on a surface or edge of the supporting base 5. The support 62may be separated from the supporting base 5, or the support 62 and thesupporting base 5 are monolithically integrated. The semiconductor lightemitting element may be electrically coupled to the support 62 bybonding, and a device bonding layer 63 is used to fix the transparentsubstrate 2 on the supporting base 5. The first angle θ1 is maintainedbetween the transparent substrate 2 and a surface of the supporting base5 without supports. The semiconductor light emitting elements may alsobe disposed on the surface of the supporting base 5 without supports soas to enhance the light emitting performance of the illumination device11. Additionally, the semiconductor light emitting element may also beinserted and connected to the support 62 (not shown in FIG. 21 and FIG.22), wherein a connector may be used to connect the semiconductor lightemitting element and the support (and/or the support and the supportingbase) so as to fix the transparent substrate 2 on the supporting base 5.Because the supporting base 5 and the support 62 are flexible, it ismore convenient to apply the present invention to differentapplications. Moreover, the color variety of the illumination device 11may be enhanced for different demands by combining using thesemiconductor light emitting elements having different light color.

Please refer to FIG. 23. As shown in FIG. 23, an illumination device inthis embodiment includes at least one semiconductor light emittingelement 1 and a supporting base 5. The supporting base 5 includes atleast one support 62 and at least one circuit pattern P. An end of thetransparent substrate of the semiconductor light emitting element 1 iselectrically coupled to the support 62 so as to avoid or reduce theshielding influence caused by the support 62 for light emitting from thesemiconductor light emitting element 1. The supporting base 5 may beselected from metal such as aluminum, composite metallic materialincluding aluminum, copper conductor, electric wire, ceramic substrateor printed circuit board. The support 62 may be formed by cutting andbending a part of the supporting base 5 to form an angle (as the firstangle θ1 shown in FIG. 21 and FIG. 22). The circuit pattern P isdisposed on supporting base 5, and the circuit pattern P has at leastone set of electrical port to be electrically connected to a powersupply. Another part of the circuit pattern P extends on the support 62so as to be electrically connected to the semiconductor light emittingelement 1, and the semiconductor light emitting element 1 may than beelectrically connected to the power supply via the circuit pattern P ofthe supporting base 5. In addition, the supporting base 5 may furtherinclude at least one hole H or at least one gap and fixing devices suchas screws, nails or bolts may be used to combine the supporting base 5with other device via the hole H or the gap G according to theapplication conditions of the illumination device. Meanwhile, the hole Hor the gap G may also be used to increase the heat radiating area andenhance the heat dissipation capability of the illumination device.

Please refer to FIG. 24. FIG. 24 is a schematic diagram illustrating adevice frame of an illumination device according to another preferredembodiment of the present invention. As shown in FIG. 24, a device frame322 in this embodiment includes a supporting base 5 and at least onesupport 62. Compared with the embodiment shown in FIG. 23, the support62 in this embodiment includes at least one stripe part 342 and anopening 330. The electrode 30 and the electrode 32 are respectivelydisposed on two sides of the opening 330. The stripe part 342 forms atleast one wall of the opening 330. One semiconductor light emittingelement described in the present invention is disposed correspondinglyto the opening 330 and electrically coupled to the support 62. Theconnecting conductors of the semiconductor light emitting element iselectrically connected to the electrode 30 and the electrode 32 so as todrive the semiconductor light emitting element by a power supply via thesupport 62 and the circuit pattern on the supporting base 5. A size ofthe opening 330 may not be smaller than a main light emitting surface ofthe semiconductor light emitting element so as to prevent light beamsemitted from the semiconductor light emitting element from being blockedby the support 62. A connection part between the support 62 and thesupporting base 5 may be adjustable so as to adjust the angle betweenthe support 62 and the supporting base 5 as required.

Please refer to FIG. 24 and FIG. 25. FIG. 25 is a schematic diagramillustrating an illumination device according to another preferredembodiment of the present invention. Compared with the embodiment shownin FIG. 24, an illumination device 302 shown in FIG. 25 further includesat least one support 62 having a plurality of openings 330. The openings330 are respectively disposed on two opposite sides of the support 62,and the stripe part 342 forms at least one wall of each opening 330. Thesemiconductor light emitting element 310 are disposed correspondingly tothe openings 330, and the conductive pattern or the connectingelectrodes (not shown in FIG. 25) of each semiconductor light emittingelement 310 are respectively disposed correspondingly and electricallyconnected to the electrode 30 and 32. The illumination device 302 inthis embodiment may further include a plurality of the supports 62. Thesupport 62 is disposed between the semiconductor light emitting element1 and the supporting base 5. A length of the support 62 maysubstantially range from 5.8 to 20 um. Angles between the supportingbase 5 and the supports 62 with the semiconductor light emitting elementdisposed on may be modified respectively. In other words, an anglebetween the supporting base 5 and at least one of the supports 62 may bedifferent from an angle between the supporting base 5 and another one ofthe supports 62 so as to perform required light emitting effects, butnot limited thereto. Additionally, semiconductor light emitting elementsemitting light having different wavelength ranges may be disposed on anidentical support or on different supports so as to enrich the coloreffect of the illumination device.

For enhancing the luminance and improving the light emitting effect, inan illumination device of another preferred embodiment of the presentinvention, a plurality of the semiconductor light emitting elementscomprising the transparent substrates are disposed on the supportingbases detailed above or on other supporting structures. Apoint-symmetric distribution or a line-symmetric distribution may beapplied. The semiconductor light emitting elements comprising thetransparent substrates may be point-symmetrically disposed on thesupporting structure or line-symmetrically disposed on the supportingstructure. Please refer to FIGS. 26-29. In the illumination devices ofthe embodiments shown in FIGS. 26-29, the semiconductor light emittingelements are disposed on the supporting structures having differentshapes. The light beams emitted from the illumination devices 11 may beuniform because of the point-symmetric distribution or theline-symmetric distribution (the LED structures are not shown in FIGS.26-29). The light emitting effects of the illumination devices 11 may befurther improved by adjusting the first angle described above. As shownin FIG. 26, the semiconductor light emitting elements arepoint-symmetrically arranged and form an angle between each other in 90degrees. Therefore, at least two of the semiconductor light emittingelements may face any one of the four sides of the illumination device11. As shown in FIG. 27, the angle between the semiconductor lightemitting elements is smaller than 90 degrees. As shown in FIG. 29, theangle between the semiconductor light emitting elements is larger than90 degrees. In another preferred embodiment of the present invention(not shown), the semiconductor light emitting elements may beasymmetrically disposed and at least a part of the semiconductor lightemitting elements may be disposed in a crowd or separately disposed soas to perform required light shape according to different applicationsof the illumination device.

Please refer to FIG. 30. FIG. 30 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. As shown in FIG. 30, an illumination device 301includes a semiconductor light emitting element 310 and a support 321.The support 321 includes an opening 330, and the semiconductor lightemitting element 310 is disposed correspondingly to the opening 330. Inthis embodiment, an external part of the support 321 may be work as apin or be bent to form a connecting pad required in surface mounting soas to be fixed and electrically connected to other electrical circuitunits. A light emitting surface of the semiconductor light emittingelement 310 is disposed in the opening 330, and the illumination device301 may still emit light from multi sides or six sides accordinglywhether the support 321 is transparent or not.

Please refer to FIG. 31. An illumination device is provided in thisembodiment of the present invention. The illumination device includes alamp housing 7 having a tube shape, at least one semiconductor lightemitting element 1 and a supporting structure 60. The semiconductorlight emitting element 1 is disposed on the supporting structure 60, andat least a part of the semiconductor light emitting element 1 isdisposed in space formed by the lamp housing 7. Please refer to FIG. 32.When more semiconductor light emitting elements 1 are disposed in thelamp housing 7, the first main surfaces 21A of the semiconductor lightemitting elements 1 are arranged separately and not parallel to oneanother. Additionally, the semiconductor light emitting elements 1 areat least partially disposed in space formed by the lamp housing 7, andthe semiconductor light emitting elements 1 are not closely adjacent toan inner wall of the lamp housing 7. Preferably, a distance D betweenthe semiconductor light emitting element 1 and the lamp housing 7 may beequal to or larger than 500 micrometers. However, the lamp housing 7 mayalso be formed by filling glue, and the lamp housing 7 may at leastpartially cover and directly contact the semiconductor light emittingelement 1.

Please refer to FIG. 33. FIG. 33 is a schematic diagram illustrating asemiconductor light emitting element 1 according to a preferredembodiment of the present invention. In contrast to the embodiment asshown in FIG. 10, the semiconductor light emitting element 1 in thisembodiment includes a transparent substrate 2 having an extension part 2e where a set of connecting electrodes 31 is disposed on, and at leasean LED structure 3 is disposed on a position of the transparentsubstrate 2 opposite to the set of connecting electrodes 31. The set ofconnecting electrodes 31 may include a first connecting electrode 311Aand a second connecting electrode 311B which are located on the sameside of the semiconductor light emitting element 1 and are adapted toelectrically connect the LED structure 3 and an electrical power source.The first connecting electrode 311A and the second connecting electrode311B may respectively be a positive electrode and a negative electrode,which are utilized to electrically contact corresponding electrodesdisposed on the support 62 or the base as shown in the embodiments ofthe present invention described above or below. Therefore, the LEDstructure 3 and the wavelength conversion layer 4 covered on the LEDstructure 3 can protrude from an edge of the support 62 or the base.Light emitted from the LED structure 3 can perform multi-directional oromni-directional illumination due to the transparent substrate 2 asdescribed in the above embodiments of the present invention.

Please refer to FIG. 34 to FIG. 36. FIG. 34 is a schematic diagramillustrating an illumination device 11 according to a preferredembodiment of the present invention. FIG. 35 is a schematic diagramillustrating an assembly of the supports 62 according to the preferredembodiment of the present invention. FIG. 36 is a schematic diagramillustrating the illumination device 11 with a lamp housing 7 accordingto the preferred embodiment of the present invention. As shown in FIG.34, the illumination device 11 includes a supporting base 5, at leasttwo supports 62 disposed on the supporting base 5 and coupled to eachother, and at least two semiconductor light emitting elements 1 coupledto the corresponding supports 62. At least one of the supports 62 mayhave a slot 621 and another one of the supports 62 can be inserted intothe slot 621, so that the two supports 62 are coupled to each other viathe slot 621. Further, as shown in FIG. 35, two of the supports 62 canrespectively have the slot 621 to couple to each other by engagement ofthe two slots 621. An upper edge and a low edge of one of the coupledsupports 62 can respectively align with an upper edge and a low edge ofthe other coupled support 62, so that the two supports 62 can beregularly and symmetrically disposed on the supporting base 5.

The shape of at least one of the supports 62 may be the same as orsimilar to a board or a sheet, which may include two parallel flatsurfaces having an area which is not smaller than an area of thesemiconductor light emitting element 1. According to the embodiment,preferably, the area of the support 62 may be 3 times bigger than thearea of the semiconductor light emitting element 1, so that theillumination device 11 may have preferable heat dispersion function andlighting effect. A plurality of the semiconductor light emittingelements 1 may be coupled to the corresponding supports 62 in symmetryor asymmetry. According to the embodiment as shown in FIG. 34, thesemiconductor light emitting element 1 disposed on one of the supports62 is aligned to the semiconductor light emitting element 1 disposed onanother one of the supports 62. But according to some other embodimentsof the present invention, the semiconductor light emitting element 1disposed on one of the supports 62 may be misalignedly or interlacedlydisposed corresponding to another semiconductor light emitting element 1disposed on another one of the supports 62 to compensate the shadoweffect when lighting. As shown in FIG. 36, the illumination device 11may further include a base 64 where the supporting base 5 is disposedon, and a lamp housing 7 with ball shape or candle shape covers thesupporting base 5 and is connected with the base 64. According to theembodiment as shown in FIG. 36, a plurality of the semiconductor lightemitting elements 1 are dispersedly arranged on the supports 62, and thesupports 62 respectively point toward different orientations, so thatthe illumination device 11 with the lamp housing 7 can uniformly provideomni-directional light emitting function. Light intensity of theillumination device 11 can be adjusted by decrease or increase of theamount of the semiconductor light emitting element 1. The support 62 maybe made of heat dissipating material to dissipate heat conducted fromthe semiconductor light emitting element 1. The material of at least oneof the supports 62 is selected from print circuit board, ceramic, metal,glass, plastic or combinations. Preferably, the material of at least oneof the supports 62 may be the metal core print circuit board.

Please refer to FIG. 37 and FIG. 38. FIG. 37 is a schematic diagramillustrating an illumination device 11 according to another preferredembodiment of the present invention. FIG. 38 is a schematic diagramillustrating an assembly of a support 62 and a pillar 623 according tothe preferred embodiment of the present invention. In contrast to theembodiment shown in FIG. 34, the illumination device 11 according tothis embodiment as shown in FIG. 37 further includes the pillar 623, andat least one of the supports 62 may be coupled to the pillar 623. Asshown in the figure, the pillar 623 may have at least an engaging slot623 a, such that the support 62 can be coupled to the pillar 623 byinserting the support 62 into the engaging slot 623 a of the pillar 623.According to the embodiment, a plurality of supports 62 may be insertedinto the corresponding engaging slots 623 a around the pillar 623, insymmetry or asymmetry, and the illumination device 11 can uniformlyprovide omni-directional light emitting function.

The pillar 623 may be shaped the same as or similar to a pipe that has aguiding hole 623 b disposed on at least one end surface of the pillar623. The pillar 623 can be coupled to the supporting base 5 via theguiding hole 623 b since a fixing component protrudes from thesupporting base 5 and inserts into the guiding hole 623 b of the pillar623. Therefore, the pillar 623 is detachably coupled to the supportingbase 5, and the pillar 623 can be easily disassembled from thesupporting base 5 by removal of the fixing component. The fixingcomponent can be a connector, a tube, a nail, a latch, a screw or abolt. The pillar 623 with the guiding hole 623 b can also improve thecapability of the illumination device 11 by conducting heat away fromthe semiconductor light emitting element 1. According to someembodiments of the present invention, gas or liquid material may becontained in or flowed through the guiding hole 623 b of the pillar 623to conduct more heat, so that life time of the illumination device 11can be further increased.

As shown in FIG. 38, the pillar 623 may further have at least a slit 623c disposed on at least one end surface of the pillar 623. The slit 623 cis extended to connect with one end of the engaging slot 623 a, so as tofrom an open space whereinto the support 62 can be inserted. The support62 can be moved at a radial direction of the pillar 623 to be engagedinside the engaging slot 623 a of the pillar 623, or can be moved at anaxial direction of the pillar 623 to be accommodated inside the engagingslot 623 a via the slit 623 c. Therefore, it will be easy to maintainthe illumination device 11 by replacing the failed support 62 or thesupport 62 with failed semiconductor light emitting elements 1.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. An illumination device, comprising: a supportingbase; a transparent substrate coupled to the supporting base; aplurality of LED structures disposed on the transparent substrate; awavelength conversion layer formed on the transparent substrate; and abonding layer disposed between the transparent substrate and each LEDstructure, wherein the transparent substrate and the supporting base arearranged to form an angle, and wherein the plurality of LED structuresemits different color lights.
 2. The illumination device of claim 1,wherein at least one of plurality of LED structures is a flip chip. 3.The illumination device of claim 1, further comprising a connectingconductor formed on the transparent substrate.
 4. The illuminationdevice of claim 3, wherein the connecting conductor is exposed from thewavelength conversion layer.
 5. The illumination device of claim 1,wherein the angle ranges from 30 degree to 150 degree.
 6. Theillumination device of claim 1, further comprising a first connectingelectrode and a second connecting electrode which are disposed onopposite ends of the transparent substrate.
 7. The illumination deviceof claim 1, wherein the supporting base has a central axis, theplurality of LED structures is arranged to face to the central axis. 8.The illumination device of claim 1, wherein the supporting base has acentral axis, the plurality of LED structures is arranged with its backto the central axis.
 9. The illumination device of claim 1, furthercomprising a lamp housing enclosing the supporting base, the transparentsubstrate, and the plurality of LED structures.
 10. The illuminationdevice of claim 1, wherein the wavelength conversion layer directlycontacts the transparent substrate.
 11. An illumination device,comprising: a supporting base; a transparent substrate coupled to thesupporting base; a plurality of LED structures disposed on thetransparent substrate; and a bonding layer disposed between thetransparent substrate and each of the plurality of LED structures,wherein the transparent substrate and the supporting base are arrangedto form an angle ranged of 30-150 degrees, and wherein the plurality ofLED structures emits different color lights.
 12. The illumination deviceof claim 11, wherein at least one of plurality of LED structures is aflip chip.
 13. The illumination device of claim 11, further comprising aconnecting conductor formed on the transparent substrate.
 14. Theillumination device of claim 13, further comprising a wavelengthconversion layer directly formed on the transparent substrate.
 15. Theillumination device of claim 11, further comprising a first connectingelectrode and a second connecting electrode which are disposed onopposite ends of the transparent substrate.
 16. The illumination deviceof claim 11, wherein the supporting base has a central axis, theplurality of LED structures is arranged to face to the central axis. 17.The illumination device of claim 11, wherein the supporting base has acentral axis, the plurality of LED structures is arranged with its backto the central axis.
 18. The illumination device of claim 11, furthercomprising a lamp housing enclosing the supporting base, the transparentsubstrate, and the plurality of LED structures.
 19. The illuminationdevice of claim 11, further comprising an optic layer continuouslycovering the plurality of LED structures.
 20. The illumination device ofclaim 19, wherein the optic layer directly contacts the transparentsubstrate.